VBO52-12NO7 1~ rectifier bridge standard rectifier module - ~ + ~ part number VBO52-12NO7 features / advantages: applications: package: package with dcb ceramic improved temperature and power cycling planar passivated chips very low forward voltage drop very low leakage current diode for main rectification for one phase bridge configurations supplies for dc power equipment input rectifiers for pwm inverter battery dc power supplies field supply for dc motors pws-d industry standard outline rohs compliant easy to mount with two screws base plate: copper internally dcb isolated advanced power cycling rrm 1200 i60 fsm 550 dav v = v a a = = i 3~ rectifier 1~ ixys reserves the right to change limits, conditions and dimensions. 20130415a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VBO52-12NO7 v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i r v i a v f 1.07 r 1.1 k/w r min. 60 v rsm v 40 t = 25c vj t = c vj ma 1.5 v = v r t = 25c vj i = a f v t = c c 115 p tot 110 w t = 25c c r k/w 0.4 20 1200 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation conditions unit 1.19 t = 25c vj 150 v f0 v 0.78 t = c vj 150 r f 8.1 m ? v 0.96 t = c vj i = a f v 20 1.13 i = a f 40 i = a f 40 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 1200 max. repetitive reverse blocking voltage t = 25c vj c j 19 j unction capacitance v = v; 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 550 595 1.11 1.06 a a a a 470 505 1.52 1.48 1200 dav d = rectangular 0.5 bridge output current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1300 ixys reserves the right to change limits, conditions and dimensions. 20130415a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VBO52-12NO7 ratings xxxx-xxxx yycw lot# made in germany circuit diagram product number date code package t vj c m d nm 5.75 mounting torque 4.25 t stg c 125 storage temperature -40 weight g 153 symbol definition typ. max. min. conditions virtual junction temperature unit m t nm 5.75 terminal torque 4.25 v v t = 1 second v t = 1 minute isolation voltage mm mm 9.5 26.0 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 150 a per terminal 150 -40 terminal to terminal pws-d delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol VBO52-12NO7 472344 box 10 VBO52-12NO7 standard 2500 3000 isol threshold voltage v 0.78 m ? v 0 max r 0 max slope resistance * 6.9 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130415a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VBO52-12NO7 - ~ + ~ outlines pws-d ixys reserves the right to change limits, conditions and dimensions. 20130415a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
VBO52-12NO7 0 1 1 100 1000 10000 v f [v] i f [a] 0.4 0.8 1.2 1.6 0 20 40 60 80 100 0.001 0.010 0.100 1.000 200 300 400 500 1 10 100 1000 10000 0.0 0.4 0.8 1.2 0 25 50 75 100 125 150 175 01020 0 10 20 30 0 25 50 75 100 125 150 0 20 40 60 80 100 i fsm [a] t[s] t[ms] i 2 t [a 2 s] p tot [w] i davm [a] t a [c] i f(av)m [a] t c [c] z thjc [k/w] t[ms] constants for z thjc calculation: ir th (k/w) t i (s) 1 0.05 0.001 2 0.14 0.030 3 0.25 0.060 4 0.35 0.130 5 0.31 0.920 0.8 x v rrm 50 hz t vj =45c t vj =45c v r =0 v r thja : 0.6 kw 0.8 kw 1kw 2kw 4kw 8kw dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 125c 150c t vj =150c t vj =150c t vj =25c graph 1* fig. 1 forward current vs. voltage drop per diode fig. 2 surge overload current vs. time per diode fig. 3 i 2 t vs. time per diode fig. 4 power dissipation vs. forward current and ambient temperature per diode fig. 5 max. forward current vs. case temperature per diode fig. 6 transient thermal impedance j unction to case vs. time per diode rectifier ixys reserves the right to change limits, conditions and dimensions. 20130415a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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